Audison Thesis HV venti
2-channel amplifier
/piece
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Description
Discover the "Thesis HV venti", a 2-channel amplifier that will revolutionize the heart of your music system. Manufactured by Audison, an industry leader in audio technology, this amplifier sets new standards in performance and sound quality. With its uncompromising pursuit of maximum performance and a unique dual-mono design, the HV venti sets itself apart from conventional amplifiers. Resistant to integrated circuits, it allows sound carriers to operate at higher powers and voltages for an unbeatable listening experience.
DUAL-MONO CONSTRUCTION
Four Synchro-PWM power supplies enable a very fast transient response and create a dual-mono configuration.
MOSFET-BJT-HYBRID-CONFIGURATION
The HV venti utilizes a unique power stage topology with discrete IGBTs consisting of two Hitachi DMOS driving two pairs of complementary Sanken Power BJTs, each rated for 30A peak current and 200W power dissipation.
A-CLASS PREAMPLIFIER AND DRIVER
It consists of two groups, the front-end preamplifier and the control unit. The entire stage is balanced up to the driver outputs. The supply voltage is 90 V and is intended specifically for this stage and for the two separate channels. The separate 150 V power supply is thermally stabilized and class A biased. The input is balanced with the first stage a complementary JFET differential and the second stage a complementary BJT differential. The voltage amplifier is a cascode amplifier with a buffer to drive the output stage.
SPECIFICATIONS
TECHNICAL DATA OF THE AMPLIFIER
- Channels 2
- Amplifier class A-Class
- Hi Level Input Yes
- Low Level Input Yes
- Digital input No
- Supply voltage / fuse 11 - 16 VDC
- No-load current 4.2 A
- No-load current when switched off 0.006 mA
- Power consumption @ 14.4 VDC, 2Ω, max. music power 90 A
- Remote IN 7 - 16 VDC - 1 mA
AMPLIFIER SECTION
- Verzerrung - THD @ 100 Hz, 4Ω, 70% Nennleistung <0.05%
- Bandwidth A (-3 dB, 2 VRMS, 4 Ω): 4Hz ÷ 75 kHz
- S/N ratio A (A weighed @1 V): 100 dB
- Attenuation factor A (1kHz, 4 Ohms): 80
- Input sensitivity Pre-In Input sensitivity (high): 0.25 - 1.6 VRMS Input sensitivity (low): 1 - 7 VRMS
- Total power RMS 1600 W
- Output power (RMS) @14.4 VDC, 1% THD
- 2 Ch: 400 W x 2 (4Ω)
- 2 Ch: 800 W x 2 (2Ω)
- 1 Ch: 900 W x 1 (4Ω)
- Adjustable crossover No
INPUTS
- Input type Pre IN: L/R (ABS)
- Filters Outputs Pre OUT (pre in bypass): L/R (ABS)
- Filter Pass A Crossover frequencies High pass & Low pass stereo 45 - 55 - 65 - 80Hz, 12dB/oct.
- Filter Pass B Crossover frequencies Lo-pass mono 45 - 55 - 65 - 80Hz, 24dB/oct.
MORE
- Fuse 100 A
- Other Fucntions Demo mode ext. supply: 12 VDC - 600 mA ; Ext. cap terminals: 18 VDC cap min
- Weight 15 kg
DIMENSIONS
- Dimension A 510 mm
- Dimension B 85 mm
- Dimension C 280 mm
PROPERTIES
- Exclusive circuit IGBT (Insulated Gate Bipolar Transistor).
- A class preamplifier, intermediate stages and drivers.
- Dual-mono design with four power supply units in Synchro-PWM
configuration. - Manufactured exclusively with discrete components.
- The signal switching is carried out exclusively with relays.
- Fully balanced input circuit.
- Power supply on separate circuit board to avoid interference.
- Dual Power" function for switching between Hi-Current and Hi-Power.
- Bias Selector' function to change the percentage in the A class.
- High-quality crossover module included in the scope of delivery.
- 5 mm aluminum housing that connects two lateral cooling channels.
Download data sheet
